PNP Darlington Transistor

PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61.

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Fairchild

仙童半导体

PNP Darlington transistor

DESCRIPTION PNP Darlington transistor in a SOT223 plastic package. NPN complement: PZTA14. FEATURES • High current (max. 500 mA) • Low voltage (max. 30 V). APPLICATIONS • Preamplifiers requiring high input impedance.

文件：51.93 Kbytes 页数：8 Pages

PHI

飞利浦

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES ● Low Voltage and High Current ● High Current Gain Applications

文件：210.45 Kbytes 页数：1 Pages

JIANGSU

长电科技

PNP Silicon Darlington Transistors

PNP Silicon Darlington Transistors ● For general AF applications ● High collector current ● High current gain ● Complementary types: PZTA 13, PZTA 14 (NPN)

文件：139.93 Kbytes 页数：4 Pages

SIEMENS

西门子

PNP Darlington Transistor

文件：645.38 Kbytes 页数：14 Pages

Fairchild

仙童半导体

PNP SILICON DARLINGTON TRANSISTOR SURFACE MOUNT

PNP Small-Signal Darlington Transistor This PNP small-signal darlington transistor is designed for use in preamplifiers input applications or wherever it is necessary to have a high input impedance. The device is housed in the SOT-223 package which is designed for medium power surface mount appli

文件：170 Kbytes 页数：6 Pages

Motorola

摩托罗拉

PNP 达林顿晶体管

该器件设计用于要求极高电流增益（电流达800 mA）的应用。 采用工艺61设计。

ONSEMI

安森美半导体

达林顿管

JSCJ

长晶科技

Package：TO-261-4，TO-261AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP DARL 30V 1.2A SOT223-4

ONSEMI

安森美半导体

PNP SILICON DARLINGTON TRANSISTOR SURFACE MOUNT

恩XP