Applications requiring extremely high current gain at collector currents to 500mA

NPN Darlington Transistor • This device designed for applications requiring extremely high current gain at collector currents to 500mA. • Sourced from process 03.

文件：82.27 Kbytes 页数：4 Pages

Fairchild

仙童半导体

NPN Darlington Transistor

Description This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from process 03. Features • These are Pb−Free Devices

文件：132.77 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):1.5V(Max) @IC= 0.1A APPLICATIONS · Low current high speed switching applications · Low power audio amplifier

文件：302.05 Kbytes 页数：3 Pages

ISC

无锡固电

NPN达林顿晶体管

•该器件设计用于要求极高电流增益（电流达500 mA）的应用。\n•采用工艺03设计。;

ONSEMI

安森美半导体

Package：TO-261-4，TO-261AA；包装：剪切带（CT）带盒（TB） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN DARL 100V 0.8A SOT223

ONSEMI

安森美半导体