丝印：3906；Package：SOT-223；PNP General Purpose Amplifier

Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA.

文件：49.83 Kbytes 页数：6 Pages

Fairchild

仙童半导体

丝印：3906；Package：SOT-223；PNP General Purpose Amplifier

Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA.

文件：654.29 Kbytes 页数：10 Pages

Fairchild

仙童半导体

丝印：3906；Package：SOT-2234L；PNP General-Purpose Amplifier

Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA.

文件：421.71 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

PNP switching transistor

DESCRIPTION PNP switching transistor in a SOT223 plastic package. NPN complement: PZT3904. FEATURES • Low current (max. 100 mA) • Low voltage (max. 40 V). APPLICATIONS • High-speed switching.

文件：48.03 Kbytes 页数：8 Pages

PHI

飞利浦

S OT-223 Plastic-Encapsulate Transistors

SOT-223 Plastic-Encapsulate Transistors FEATURES ● Low Voltage and Low Current ● Complementary to PZT3904 ● General Purpose Amplifier and Switch Application

文件：1.12127 Mbytes 页数：4 Pages

JIANGSU

长电科技

PNP Silicon Switching Transistor

PNP Silicon Switching Transistor ● High DC current gain 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Complementary type: PZT 3904 (NPN)

文件：119.28 Kbytes 页数：5 Pages

SIEMENS

西门子

SMALL SIGNAL PNP TRANSISTOR

SMALL SIGNAL PNP TRANSISTOR ■ SILICON EPITAXIAL PLANAR PNP TRANSISTOR ■ SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS ■ TAPE AND REEL PACKING ■ THE NPN COMPLEMENTARY TYPE IS PZT3904 APPLICATIONS ■ WELL SUITABLE FOR SMD MOTHER BOARD ASSEMBLY ■ SMALL LOAD SWITCH TRANSI

文件：46.84 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

SOT-223 Plastic-Encapsulate Transistors

FEATURES Low Voltage and Low Current Complementary to PZT3904 General Purpose Amplifier and Switch Application

文件：1.80714 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: -0.2 A Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：179.52 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

PNP Transistor

Features • Package SOT-223 Applications: • Switching • Amplification

文件：689.58 Kbytes 页数：4 Pages

SKTECHNOLGYSHIKE Electronics

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