NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19.

文件：113.81 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19.

文件：211.6 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

NPN GENERAL PURPOSE AMPLIFIER

FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA.

文件：67.42 Kbytes 页数：6 Pages

UTC

友顺

Suface Mount Si-Epitaxial Planar Switching Transistors

Power dissipation 1.3 W Plastic case SOT-223 Weight approx. 0.04 g Plastic material has UL classification 94V-0 Standard packaging taped and reeled

文件：109.37 Kbytes 页数：2 Pages

DIOTEC

德欧泰克

NPN Plastic-Encapsulate Transistors

Features • Surface Mount SOT-223 Package • Capable of 1Watts of Power Dissipation • Ic:0.6A • Marking:ZT2222A • Operating and Storage Junction Temperatures:-55°C to 150°C • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Halogen free available upon request by add

文件：618.77 Kbytes 页数：4 Pages

MCC

NPN Silicon Planar Epitaxial Transistor

NPN Silicon PlanarEpitaxial Transistor P/b Lead(Pb)-Free

文件：108.3 Kbytes 页数：4 Pages

WEITRON

丝印：ZT2222A；Package：SOT-223；NPN switching transistor

DESCRIPTION NPN switching transistor in a SOT223 plastic package. PNP complement: PZT2907A. FEATURES • High current (max. 600 mA) • Low voltage (max. 40 V). APPLICATIONS • Switching and linear amplification.

文件：130.5 Kbytes 页数：7 Pages

恩XP

SOT-223 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Epitaxial planar die construction ● Complementary PNP Type available (PZT2907A)

文件：1.53681 Mbytes 页数：4 Pages

JIANGSU

长电科技

NPN Transistors

■ Features ● Epitaxial planar die construction ● Complementary to PZT2907A

文件：718.27 Kbytes 页数：2 Pages

KEXIN

科信电子

General Purpose Transistor

FEATURES Power dissipation PCM:1 W (Tamb=25°C) Collector current ICM :0.6 A Collector-base voltage V(BR)CBO :75V Operating and storage junction temperature range TJ,Tstg: -55°C to +150°C

文件：182.41 Kbytes 页数：4 Pages

SECOS

喜可士