首页 >PXT3904-TP>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Plastic-EncapsulateTransistors FEATURES ComplimenttoPXT3906U Lowcurrent Lowvoltage | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 | GWSEMI | ||
SMALLSIGNALNPNTRANSISTOR ■SILICONEPITAXIALPLANARNPNTRANSISTOR ■SOT-223PLASTICPACKAGEFORSURFACEMOUNTINGCIRCUITS ■TAPEANDREELPACKING ■THEPNPCOMPLEMENTARYTYPEISPZT3906 APPLICATIONS ■WELLSUITABLEFORSMDMOTHERBOARDASSEMBLY ■SMALLLOADSWITCHTRANSISTORWITHHIGHGAINANDLOWSAT | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
NPNswitchingtransistor DESCRIPTION NPNswitchingtransistorinaSOT223plasticpackage.PNPcomplement:PZT3906. FEATURES •Lowcurrent(max.200mA) •Lowvoltage(max.40V). APPLICATIONS •High-speedsaturatedswitching. | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPNGeneralPurposeAmplifier Description Thisdeviceisdesignedasageneral-purposeamplifierandswitch.Theusefuldynamicrangeextendsto100mAasaswitchandto100MHzasanamplifier. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
NPNSiliconSwitchingTransistor ●HighDCcurrentgain0.1mAto100mA ●Lowcollector-emittersaturationvoltage ●Complementarytype:PZT3906(PNP) | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 | SIEMENS | ||
NPNSiliconSwitchingTransistor •HighDCcurrentgain:0.1mAto100mA •Lowcollector-emittersaturationvoltage •Complementarytype:PZT3906(PNP) | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
NPNGeneralPurposeAmplifier | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
NPNGeneralPurposeAmplifier Thisdeviceisdesignedasageneralpurposeamplifierandswitch.Theusefuldynamicrangeextendsto100mAasaswitchandto100MHzasanamplifier. | PFSShenzhen Ping Sheng Electronics Co., Ltd. 平盛电子深圳市平盛电子有限公司 | PFS | ||
GeneralPurposeTransistor FEATURES Powerdissipation PCM:1W˄Tamb=25°C Collectorcurrent ICM:0.2A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJˈTstg:-55℃to+150℃ | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
SOT-223Plastic-EncapsulateTransistors FEATURES LowVoltageandLowCurrent ComplementarytoPZT3906 GeneralPurposeAmplifierandSwitchApplication | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
