丝印：8AC；Package：SOT8002-1；30 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic level compatible • Trench MOSFET technology • MLPAK33 package (3.3 x 3.3 mm f

文件：341.36 Kbytes 页数：14 Pages

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30 V, P-channel Trench MOSFET

P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.\n • Logic level compatible\n• MLPAK33 package (3.3 x 3.3 mm footprint)\n;

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30 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Trench MOSFET technology • MLPAK33 package (3.3 x 3.3 mm f

文件：323.56 Kbytes 页数：14 Pages

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