丝印：7AB；Package：SOT8002-1；N-channel 60 V, 11.5 mOhm, logic level Trench MOSFET in MLPAK33

1. General description General purpose, 42 A rated, logic level N-channel enhancement mode Power MOSFET in MLPAK33 package. 2. Features and benefits • Logic level compatibility • Trench MOSFET technology • Thermally efficient package in a small form factor (3.3 mm x 3.3 mm footprint) 3. App

文件：333.03 Kbytes 页数：11 Pages

NEXPERIA

安世

N-channel 60 V, 11.5 mOhm, logic level Trench MOSFET in MLPAK33

1. General description General purpose, 42 A rated, logic level N-channel enhancement mode Power MOSFET in MLPAK33 package. 2. Features and benefits • Logic level compatibility • Trench MOSFET technology • Thermally efficient package in a small form factor (3.3 mm x 3.3 mm footprint) 3. App

文件：333.03 Kbytes 页数：11 Pages

NEXPERIA

安世

N-channel 60 V, 11.5 mOhm, logic level Trench MOSFET in MLPAK33

General purpose, 42 A rated, logic level N-channel enhancement mode Power MOSFET in MLPAK33 package. • Logic level compatibility\n• Trench MOSFET technology\n• Thermally efficient package in a small form factor (3.3 mm x 3.3 mm footprint);

Nexperia

安世

N-channel 60 V, 12.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology enhanced for repetitive avalanche

General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package, using application specific (ASFET) repetitive avalanche silicon technology. Features and benefits • High reliability LFPAK56D package, copper-clip, solder die attach and qualified to 175 °C • Test

文件：289.21 Kbytes 页数：13 Pages

NEXPERIA

安世

N-channel 60 V 12 mΩ standard level MOSFET in LFPAK33

1. General description Standard level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of motor, industrial, communications and domestic equipment. 2. Features and benefits • High efficiency due to low switching and conductio

文件：297.99 Kbytes 页数：12 Pages

NEXPERIA

安世

N-channel LFPAK 60 V, 11.1 mΩ standard level MOSFET

1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low RDSon and low gate cha

文件：857.76 Kbytes 页数：15 Pages

NEXPERIA

安世