Thermally-Enhanced High Power RF LDMOS FET

文件：895.49 Kbytes 页数：8 Pages

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Thermally-Enhanced High Power RF LDMOS FET

文件：895.49 Kbytes 页数：8 Pages

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FET

Infineon

英飞凌

Cellular (2000 MHz to 2200 MHz)

High Power RF LDMOS FET, 240 W, 28 V, 2110 – 2170 MHz ·Broadband internal input and output matching\n ·Typical Pulsed CW performance, 2140 MHz, 28 V, 10 μs pulse width, 10% duty cycle, Class AB - Output power at P1dB = 240 W - Efficiency = 50% - Gain = 19 dB\n ·Capable of handling 10:1 VSWR @28 V, 240 W (CW) output power\n ·Integrated ESD pr;

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包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC AMP RF LDMOS

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英飞凌