High Power RF LDMOS FET 240 W,28 V, 2515 - 2675 MHz

The PXAE261908NF is a 240-watt (P3dB) LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2515 to 2675 MHz frequency band. Features include input and output matching, high gain and a thermally-enhanced package with earless flange. Manufactured with an advanced L ·Typical pulsed CW performance, 2675 MHz, 28 V Output power at P1dB = 51 W Output power at P3dB = 240 W Gain = 11.8 dB Efficiency = 60%\n·Integrated ESD protection\n·Human Body Model, Class 2 (per ANSI/ESDA/JEDEC JS-001)\n·Low thermal resistance\n·Pb-free and RoHS compliant;

MACOM

Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 2515 – 2675 MHz

Description The PXAE261908NF is a 240-watt (P3dB) LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2515 to 2675 MHz frequency band. Features include input and output matching, high gain and a thermally-enhanced package with earless flange. Manufactured

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BGA

INFINEON/英飞凌

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BGA

INFINEON/英飞凌

上传：深圳市品优时代科技有限公司

BGA

INFINEON/英飞凌

上传：深圳市品优时代科技有限公司