PXAE183708NB-V1-R2分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

PXAE183708NB-V1-R2属于分立半导体产品的晶体管-FETMOSFET-射频。由WOLFSPEED, INC.制造生产的PXAE183708NB-V1-R2晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。

Description

The PXAE183708NB is a 320-watt LDMOS FET intended for use in

multi-standard cellular power amplifier applications in the 1805 to

1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.

Manufactured with Wolfspeed’s advanced LDMOS process, this device

provides excellent thermal performance and superior reliability

Features

• Broadband internal input and output matching

• Asymmetrical Doherty design

- Main: P3dB = 160 W Typ

- Peak: P3dB = 315 W Typ

• Typical Pulsed CW performance, 1880 MHz, 28 V,

Doherty configuration, 10 µs pulse width, 10

duty cycle, Class AB (main), Class C (peak)

- Output power at P1dB = 320 W

- Output power at P3dB = 430 W

- Drain efficiency = 60

- Gain = 13.5 dB

• Capable of handling 10:1 VSWR @ 28 V, 54 W (1C

WCDMA) output power

• Human Body Model Class 2 (per ANSI/ESDA/JEDEC

JS-001)

• Integrated ESD protection

• Low thermal resistance

• Pb-free and RoHS compliant