Thermally-Enhanced High Power RF LDMOS FET

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Thermally-Enhanced High Power RF LDMOS FET

文件：1.25245 Mbytes 页数：8 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET

Infineon

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Cellular (2300 MHz to 2700 MHz)

Thermally-Enhanced High Power RF LDMOS FET, 75W, 28V, 2496 - 2690MHz ·Broadband internal input and output matching\n ·Asymmetrical Doherty design - Main: 25 W Typ (P1dB) - Peak: 50 W Typ (P1dB)\n ·Typical pulsed performance in a Doherty configuration, at 39.5 dB POUT, 2690 MHz, 28 V, with pulse 10 μs, 10% DC - Gain = 16dB - Efficiency = 45%\n ·Integrated E;

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IC AMP RF LDMOS

Wolfspeed(CREE)

包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC AMP RF LDMOS

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