High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz

Description The PXAC243502FV LDMOS FET is a 350-watt LDMOS FET designed for use in power amplifier applications in the 2300 MHz to 2400 MHz frequency band. Features include an asymmetric design with high gain and a thermally-enhanced package with earless flange. Manufactured with Wolfspeeds advan

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High Power RF LDMOS Field Effect Transistor

文件：1.36723 Mbytes 页数：10 Pages

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High Power RF LDMOS Field Effect Transistor

文件：1.36723 Mbytes 页数：10 Pages

INFINEON

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High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz

文件：1.37142 Mbytes 页数：10 Pages

INFINEON

英飞凌

High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz

文件：1.37142 Mbytes 页数：10 Pages

INFINEON

英飞凌

High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz

文件：1.37142 Mbytes 页数：10 Pages

INFINEON

英飞凌

High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz

文件：1.37142 Mbytes 页数：10 Pages

INFINEON

英飞凌

High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz

文件：1.37142 Mbytes 页数：10 Pages

INFINEON

英飞凌

High Power RF LDMOS Field Effect Transistor

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Cellular (2300 MHz to 2700 MHz)

High Power RF LDMOS FET, 350W, 28V, 2300 – 2400 MHz ·Asymmetric design - Main: 150W P1dB - Peak: 200W P1dB\n ·Broadband internal matching\n ·CW performance at 2350MHz, 28V - Ouput power = 250W P1dB - Efficiency = 46% - Gain = 16dB\n ·Integrated ESD protection\n ·Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)\n ·Low thermal resistance\;

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