High Power RF LDMOS FET 100 W, 28 V, 2300 – 2400 MHz

The PXAC241002FC is a 100-watt LDMOS FET with an asymmetric design, intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include dual-path design, input and output matching, high gain and a thermally-enhanced package with earless f • Broadband internal input and output matching\n• Asymmetric Doherty design• Main: P1dB = 40 W Typ\n• Peak: P1dB = 60 W Typ\n\n• Typical Pulsed CW performance, 2400 MHz, 28 V, 160 μsec pulse width, 10% duty cycle (Doherty configuration)• Output power at P1dB = 34 W\n• Output power at P3dB = 81 W;

MACOM

Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz

文件：279.64 Kbytes 页数：8 Pages

Cree

科锐

Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz

文件：279.64 Kbytes 页数：8 Pages

Cree

科锐

包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RFP-LD10M

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包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS

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Package：H-37248C-4；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：100W, SI LDMOS, 28V, 2300-2400MH

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