Thermally-Enhanced High Power RF LDMOS FET

文件：1.05183 Mbytes 页数：9 Pages

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Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 ??1995 MHz

文件：525.67 Kbytes 页数：9 Pages

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Thermally-Enhanced High Power RF LDMOS FET

文件：1.05183 Mbytes 页数：9 Pages

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Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 ??1995 MHz

文件：1.0608 Mbytes 页数：9 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 ??1995 MHz

文件：1.0608 Mbytes 页数：9 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 ??1995 MHz

文件：1.0608 Mbytes 页数：9 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 ??1995 MHz

文件：1.0608 Mbytes 页数：9 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 ??1995 MHz

文件：1.0608 Mbytes 页数：9 Pages

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Cellular (1800 MHz to 1995 MHz)

Thermally-Enhanced High Power RF LDMOS FET, 240 W, 28 V, 1930 – 1995 MHz ·Broadband internal input and output matching\n ·Asymmetric Doherty design - Main: P1dB = 110 W Typ - Peak: P1dB = 120 W Typ\n ·Typical Pulsed CW performance, 1990 MHz, 28 V, combined outputs - Output power at P1dB = 240 W - Efficiency = 54% - Gain = 14 dB\n ·Capapable of handling 10:1 VSW;

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High Power RF LDMOS FET240 W, 28 V, 1930 – 1995 MHz

The PXAC192908FV is a 240-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1930 to 1995 MHz frequency band. Features include dual-path design, high gain and thermally-enhanced package with earless flanges. Manufactured with Wo • Broadband internal input and output matching\n• Asymmetric Doherty design\n• Main: P1dB = 120 W Typ\n• Peak: P1dB = 220 W Typ\n• Typical Pulsed CW performance, 1990 MHz, 28 V, combined outputs\n• Output power at P1dB = 240 W\n• Efficiency = 54%\n• Gain = 14 dB\n• Capable of handling 10:1 VSWR ;

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