Q1314

RockerSwitch,multiplecontactarrangement

QPA1314DEVB

13.75–14.5GHz55WattGaNPowerAmplifier

KeyFeatures •FrequencyRange:13.75–14.5GHz •ExtendedFrequencyRange:12.75–15.35GHz •PSAT(PIN=25dBm):47.5dBm •PAE(PIN=25dBm):37% •IM3(POUT/Tone=40dBm):-25dBc •SmallSignalGain:29dB •Bias:VD=+24V,ID12=168mA,ID3=512mA, VG=-2.3V+/-rang

QPA1314T

13.75–14.5GHz55WattGaNPowerAmplifier

KeyFeatures •FrequencyRange:13.75–14.5GHz •ExtendedFrequencyRange:12.75–15.35GHz •PSAT(PIN=25dBm):47.5dBm •PAE(PIN=25dBm):37% •IM3(POUT/Tone=40dBm):-25dBc •SmallSignalGain:29dB •Bias:VD=+24V,ID12=168mA,ID3=512mA, VG=-2.3V+/-rang

RLB1314

Through-HolePowerInductor

RN1314

TOSHIBATransistorSiliconNPNEpitaxialType(PCTProcess)

Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications •Withbuilt-inbiasresistors •Simplifycircuitdesign •Reduceaquantityofpartsandmanufacturingprocess •ComplementarytoRN2314~RN2318

RSZ-1314

1WattSMDMiniatureIsolatedSingleOutput

RSZ-1314HP

1WattSMDMiniatureIsolatedSingleOutput

SB1314E-H

ChipLED

SB1314E-V

ChipLED

SB1314E-V

CHipLED