RN1309

TOSHIBATransistorSiliconNPNEpitaxialType(PCTProcess)

Switching,InverterCircuit,InterfaceCircuit andDriverCircuitApplications •Withbuilt-inbiasresistors. •Simplifycircuitdesign •Reduceaquantityofpartsandmanufacturingprocess •ComplementarytoRN2307toRN2309

RSZ-1309

1WattSMDMiniatureIsolatedSingleOutput

RSZ-1309HP

1WattSMDMiniatureIsolatedSingleOutput

SIR1309DP

P-Channel30V(D-S)MOSFET

FEATURES •TrenchFET®GenIVp-channelpowerMOSFET •100RgandUIStested •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •Adapterswitch •Loadswitch •Motordrivecontrol •Batterymanagement •Motordrivecontrol

SMC1309

LowOnResistance(500mTYP)

Features LowOnResistance(500mTYP) LowOutputCapacitance(18pFTYP@25V) LowOutputLeakage(1nAMAX@80V) 750mAMaximumContinuousLoadCurrent 2APulsedCurrent(100mSPeriod@10%DC) IsolationVoltage(500VRMS) 1FormCwithBreakBeforeMakeSwitching LongL

SMJ1309

LowOnResistance(500mTYP)

Features LowOnResistance(500mTYP) LowOutputCapacitance(18pFTYP@25V) LowOutputLeakage(1nAMAX@80V) 750mAMaximumContinuousLoadCurrent IsolationVoltage(500VRMS) 2FormCwithBreakBeforeMakeSwitching LongLife/HighReliability RoHS/Pb-Free/REACH

SSD1309

OLEDDriverController

PassiveMatrixOLEDDriverController SolomonSystechcontinuestobethemarketleaderofthePassiveMatrixOLED(“PMOLED”)displayIC,witha competitiveedgeinsmallsizemobiledisplayapplications.BesidesprovidingafullrangeofPMOLEDdriverIC fromicon,monoandgrayscaletofull

TDA1309H

Low-voltagelow-powerstereobitstreamADC/DAC

GENERALDESCRIPTION TheTDA1309Hisasinglechipstereoanalog-to-digitalanddigital-to-analogconverteremployingbitstreamconversiontechniques.Thelowvoltagerequirementmakesthedeviceeminentlysuitableforuseinlow-voltagelow-powerportabledigitalaudioequipmentwhichincorporate

PHI

TK1309

POLYSTYRENE/POLYCARBONATEENCLOSURETK1309

TMR1309

TMROmnipolarSwitch

GeneralDescription TMR1309isadigitalomnipolarmagneticswitchthatintegratesTMRandCMOStechnologyinordertoprovideamagnetically triggereddigitalswitchwithhighsensitivity,highspeed,andultra-lowpowerconsumption.Itisdesignedforuseinapplications thatarebothpower-c