AUB015N04

MOSFETSiliconN-ChannelMOS

Applications Single-endedflybackortwo-transistorforwardtopologies. PCpower,PDAdaptor,LCD&PDPTVandLEDlighting. Features Lowdrain-sourceon-resistance:RDS(ON)=1.2mΩ(typ.) EasytocontrolGateswitching Enhancementmode:Vth=2.5to4.5V

AUP015N04

MOSFETSiliconN-ChannelMOS

Applications Single-endedflybackortwo-transistorforwardtopologies. PCpower,PDAdaptor,LCD&PDPTVandLEDlighting. Features Lowdrain-sourceon-resistance:RDS(ON)=1.2mΩ(typ.) EasytocontrolGateswitching Enhancementmode:Vth=2.5to4.5V

AUP015N04

MOSFETSiliconN-ChannelMOS

Applications Single-endedflybackortwo-transistorforwardtopologies. PCpower,PDAdaptor,LCD&PDPTVandLEDlighting. Features Lowdrain-sourceon-resistance:RDS(ON)=1.2mΩ(typ.) EasytocontrolGateswitching Enhancementmode:Vth=2.5to4.5V

FDMS015N04B

NewProducts,TipsandToolsforPowerandMobileApplications

IIPP015N04N

iscN-ChannelMOSFETTransistor

IPB015N04L

iscN-ChannelMOSFETTransistor

IPB015N04LG

OptiMOS3Power-Transistor

OptiMOS™3Power-Transistor Features •FastswitchingMOSFETforSMPS •OptimizedtechnologyforDC/DCconverters •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •100Ava

IPB015N04N

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=120A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.5mΩ(Max)@VGS=10V APPLICATIONS ·AutomaticTestEquipment ·CurrentRegulators ·DCChoppers

IPB015N04N

IscN-ChannelMOSFETTransistor

IPB015N04NG

OptiMOS??Power-Transistor

OptiMOS™3Power-Transistor Features •FastswitchingMOSFETforSMPS •OptimizedtechnologyforDC/DCconverters •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •100Avala