首页 >PW11030SL>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PVCandNylonLEDSpacers | HeycoHeyco. 海科 | Heyco | ||
PEARLADVANCEDIP54 Description PearlCircularIP54withSensor-12.5W | EKTOR Evolt | EKTOR | ||
EMI/EMCFILTER Features -Ideallysuitedforproductsthatmustconformtopart 15,FCCregulations -Metalcasedminiaturetypewithhighperformance -MeetovervoltagecategoryIIofIEC60664andcomply with[EC60950 -UsesIECconnectorthatmeetsthesafetystandards fromcertificationbodies -Bo | DIT DONG IL TECHNOLOGY LTD. | DIT | ||
EMI/EMCFILTER Features -Ideallysuitedforproductsthatmustconformtopart 15,FCCregulations -Metalcasedminiaturetypewithhighperformance -MeetovervoltagecategoryIIofIEC60664andcomply with[EC60950 -UsesIECconnectorthatmeetsthesafetystandards fromcertificationbodies -Bo | DIT DONG IL TECHNOLOGY LTD. | DIT | ||
High?묬urrentComplementarySiliconPowerTransistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
COMPLEMENTARYDARLINGTONPOWERTRANSISTOR FEATURES •HIGHDCCURRENTGAIN HFE=1000Min@IC=25A HFE=400Min0@IC=50A •CURVESTO100A(Pulsed) •DIODEPROTECTIONTORATEDIC •MONOLITHICCONSTRUCTIONWITHBUILT-INBASE–EMITTERSHUNTRESISTOR •JUNCTIONTEMPERATURETO+200°C APPLICATIONS Foruseasoutputde | SEME-LAB Seme LAB | SEME-LAB | ||
COMPLEMENTARYSILICONDARLINGTONPOWERTRANSISTORS High−CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features •HighDCCurrentGain−hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc •Curvesto100A | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
50AMPERECOMPLEMENTARYSILICONDARLINGTONPOWERTRANSISTORS60.120VOLTS300WATTS High-CurrentComplementarySiliconTransistor ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc •Curvesto100A(Pulsed) • | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
POWERTRANSISTOR(50A,60-120V,300W) COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ...designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighGainDarlingtonPerformance •HighDCCurrentGain:hFE=1000(Min)@IC=25A hFE=400(Mi | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | MOSPEC | ||
High-CurrentComplementarySiliconPowerTransistors High-CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features •HighDCCurrentGain-hFE=1000(Min)@Ic=25Adc hFE=400(Min)@Ic=50Adc •Curvesto100A(P | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI |
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