首页 >PVI2001A>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
RFAMPLIFIER | SPECTRUM Spectrum Instrumentation GmbH | SPECTRUM | ||
RFAMPLIFIERMODEL | APITECH API Technologies Corp | APITECH | ||
20.0AMPSILICONRECTIFIERS | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
SINGLE-PHASEGLASSPASSIVATEDSILICONBRIDGERECTIFIERVOLTAGERANGE50to1000VoltsCURRENT20Amperes FEATURES *Lowleakage *Lowforwardvoltage *Surgeoverloadrating:300amperespeak *Mountingposition:Any *Idealforprintedcircuitboards *Highforwardsurgecurrentcapability | RECTRON Rectron Semiconductor | RECTRON | ||
OUTLINEDIMENISON&BLOCKDIAGRAM | OKAYAOKAYA ELECTRIC INDUSTRIES CO., LTD. 冈谷电机工业株式会社 | OKAYA | ||
SAWFilter | REYCONNSREYCONNS CHINA LIMITED 来亿中国来亿中国有限公司 | REYCONNS | ||
FastrecoveryDiodes(SiliconEpitaxialPlanar) Features 1)UltralowVFveryfastrecovery 2)Fastrecovery 3)Lowswitchingloss 4)StandardpackageTO-220FN,CPD Applications Highfrequencyrectification | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications Switching,InverterCircuit,InterfaceCircuit AndDriverCircuitApplications ●Withbuilt-inbiasresistors ●Simplifycircuitdesign ●Reduceaquantityofpartsandmanufacturingprocess ●ComplementarytoRN1001~RN1006 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
NPNSiliconGermaniumTransistorHighFrequencyMediumPowerAmplifier Features •Idealfor2GHzBandapplications.e.g2.4GHzWLAN,Digitalcordlessphone. •LowDistortionandExcellentLinearity IP3atoutput=+30dBmtyp.,P1dBatoutput=+19dBmtyp.,f=1.8GHz •HighTransitionFrequency fT=20GHztyp. •HighCollectortoEmitterVoltage | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPNSiliconGermaniumTransistorHighFrequencyMediumPowerAmplifier Features •Idealfor2GHzBandapplications.e.g2.4GHzWLAN,Digitalcordlessphone. •LowDistortionandExcellentLinearity IP3atoutput=+30dBmtyp.,P1dBatoutput=+19dBmtyp.,f=1.8GHz •HighTransitionFrequency fT=20GHztyp. •HighCollectortoEmitterVoltage | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
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