SHROUDED SPLIT BOBBIN HIGH ISOLATION POWER TRANSFORMERS

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PMI

SHROUDED SPLIT BOBBIN HIGH ISOLATION POWER TRANSFORMERS

文件：69.2 Kbytes 页数：2 Pages

PMI

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resu

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POLYFET

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

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MOSPEC

统懋

ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 2.0 Amperes)

VOLTAGE 50 to 1000 Volts CURRENT 2.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound • Exceeds environmental standards of MIL-S-19500/228. • Ultra Fast switching for high efficiency. • In

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PANJIT

強茂