SHROUDED SPLIT BOBBIN HIGH ISOLATION POWER TRANSFORMERS

文件：69.2 Kbytes 页数：2 Pages

PMI

CMOS LSI

文件：72.95 Kbytes 页数：5 Pages

ETCList of Unclassifed Manufacturers

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RF MOSFET Power Transistor, 2OW, 28V 100 - 500 MHz

Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • Common Source Configuration • Lower Noise Floor

文件：219.11 Kbytes 页数：3 Pages

MACOM

RF MOSFET Power Transistor, 2OW, 28V 100 - 500 MHz

Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Competitive Devices

文件：193.81 Kbytes 页数：3 Pages

MACOM