SHROUDED SPLIT BOBBIN HIGH ISOLATION POWER TRANSFORMERS

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PMI

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= 1.1 V(Max) @IC=4A APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

文件：257.64 Kbytes 页数：2 Pages

ISC

无锡固电

Avalanche Diodes with built-in Thyristor

Avalanche Diodes with built-in Thyristor

文件：19.93 Kbytes 页数：2 Pages

SANKEN

三垦

Avalanche Diodes with built-in Thyristor

Avalanche Diodes with built-in Thyristor

文件：27.09 Kbytes 页数：1 Pages

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