首页 >PVA3055NS-TPBF>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
100WS-BandGaNPowerAmplifier | QORVOQorvo, Inc 威讯联合威讯联合半导体(德州)有限公司 | QORVO | ||
SILICONN-P-NVERSAWATTTRANSISTORS SILICONN-P-NVERSAWATTTRANSISTORS DesignedforMedium-PowerLinearandSwitchingServiceinConsumer,Automotive,andIndustrialApplications | GESS GE Solid State | GESS | ||
SILICONN-P-NVERSAWATTTRANSISTORS High-Current,SiliconN-P-NVERSAWATTTransistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
12A,60V,0.150Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | Intersil Intersil Corporation | Intersil | ||
11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
12A,60V,0.150Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstanda specifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuch | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
12A,60V,AvalancheRated,N-ChannelEnhancement-ModePowerMOSFETs(MegaFETs) Description TheRFD3055,RFD3055SMandRFP3055N-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedfor | HARRIS Harris Corporation | HARRIS | ||
11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp | Intersil Intersil Corporation | Intersil | ||
N-ChannelLogicLevelPowerMOSFET TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
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