PUSB3FR6电路保护的TVS-二极管规格书PDF中文资料

1.1 General description

The device is designed to protect high-speed interfaces such as SuperSpeed and

Hi-Speed USB combination, SD-memory card 3.0 and thunderbolt interfaces against

ElectroStatic Discharge (ESD).

The device includes six high-level ESD protection diode structures for ultra high-speed

signal lines. The device is encapsulated in a leadless ultra small DFN2111-7 (SOT1358-1)

Surface-Mounted Device (SMD) plastic package.

All signal lines are protected by a special diode structure offering ultra low line

capacitance of only 0.35 pF. These diodes utilize a snap-back structure in order to provide

protection to downstream components from ESD voltages up to 15 kV contact exceeding

IEC 61000-4-2, level 4.

1.2 Features and benefits

 System-level ESD protection for USB 2.0 and USB 3.1 combination, SD-memory card

and thunderbolt interfaces

 Supports SuperSpeed USB 3.1 at 10 Gbps

 All signal lines with integrated rail-to-rail clamping diodes for downstream

ESD protection of 15 kV exceeding IEC 61000-4-2, level 4

 Matched 0.5 mm trace spacing

 Line capacitance of only 0.35 pF for each channel

 Design-friendly ‘pass-through’ signal routing

1.3 Applications

The device is designed for high-speed receiver and transmitter port protection:

 Portable and wearable devices

 Smartphones and tablet PCs

 TVs and monitors

 DVD recorders and players

 Notebooks, main board graphic cards and ports

 Set-top boxes and game consoles