PUSB3FA3中文资料安世数据手册PDF规格书

1. General description

The device is designed to protect high-speed interfaces such as MIPI and Low Voltage Differential

Signaling (LVDS) interfaces against ElectroStatic Discharge (ESD).

The device includes four high-level ESD protection diode structures. They protect sensitive

transmitters and receivers for ultra high-speed signal lines. The device is encapsulated in a

leadless small DFN2510A-10 (SOT1176-1) plastic package.

All signal lines are protected by a special diode configuration offering ultra low line capacitance

of only 0.29 pF. These diodes utilize a snap-back structure in order to provide protection to

downstream components from ESD voltages up to ±15 kV contact exceeding IEC 61000-4-2,

level 4.

2. Features and benefits

• Line capacitance of only 0.29 pF for each channel

• Outstanding system protection: extremely deep snap-back combined with dynamic resistance

of only 0.27 Ω

• All signal lines with integrated rail-to-rail clamping diodes for downstream ESD protection of

±15kV exceeding IEC 61000-4-2, level 4

• Matched 0.5 mm trace spacing

• Signal lines with ≤ 0.05 pF matching capacitance between signal pairs

• Design-friendly ‘pass-through’ signal routing

3. Applications

The device is designed for high-speed receiver and transmitter port protection:

• Smartphones, tablet computers, Mobile Internet Devices (MID) and portable devices

• TVs and monitors

• DVD recorders and players

• Notebooks, main board graphic cards and ports

• Set-top boxes and game consoles