丝印：H9；Package：TSSOP6；50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ

1. General description NPN/NPN Resistor-Equipped double Transistor (RET) in a very small SOT363 (SC-88) Surface- Mounted Device (SMD) plastic package. PNP/PNP complement: PUMB9-Q NPN/PNP complement: PUMD9-Q 2. Features and benefits • 100 mA output current capability • Built-in bias resist

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NEXPERIA

安世

50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ

NPN/NPN Resistor-Equipped double Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.\n PNP/PNP complement: PUMB9-Q\n NPN/PNP complement: PUMD9-Q • 100 mA output current capability\n• Built-in bias resistors\n• Simplifies circuit design\n• Reduces component count\n• Reduces pick and place costs\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世

XSON-7(1.2x2.2)

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