PNP/PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

Features * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place cost

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丝印：H8*；Package：SOT363；NPN/NPN resistor-equipped transistors;

General description NPN/NPN Resistor-Equipped Transistors (RET). Features ■ Built-in bias resistors ■ Simplifies circuit design ■ Reduces component count ■ Reduces pick and place costs Applications ■ Low current peripheral driver ■ Control of IC inputs ■ Replaces general-purpose transist

文件：179.51 Kbytes 页数：10 Pages

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Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

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NPN/NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm

NPN/NPN Resistor-Equipped Transistors (RET). • Built-in bias resistors\n• Simplifies circuit design\n• Reduces component count\n• Reduces pick and place costs\n• AEC-Q101 qualified;

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NPN/NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ

NPN/NPN Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.\n NPN/PNP complement: PUMD24-Q

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