NPN/PNP resistor-equipped transistors; R1 = 10 k廓, R2 = 47 k廓

DESCRIPTION PNP/PNP resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current

文件：149.18 Kbytes 页数：9 Pages

恩XP

丝印：D9；Package：SOT363；NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k

1.1 General description NPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. 1.2 Features and benefits 1.3 Applications Table 1. Product overview Type number Package PNP/PNP complement NPN/NPN complement Package NXP JEITA configuration PE

文件：1.06204 Mbytes 页数：17 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

文件：920.08 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NPN/PNP resistor-equipped transistors

Developed especially for the automotive sector, 500 mA RETs combine a transistor with two resistors to provide an optimal integrated solution for digital applications in automotive systems, for example control units. Also an extensive portfolio with single and double 100 mA RETs is available for s

文件：63.7 Kbytes 页数：12 Pages

PHI

飞利浦

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

丝印：D9；Package：TSSOP6；50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ

1. General description NPN/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363 (SC-88) Surface- Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH9-Q PNP/PNP complement: PUMB9-Q 2. Features and benefits • 100 mA output current capability • Built-in bias resist

文件：281.39 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ

NPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. • 100 mA output current capability\n• Built-in bias resistors\n• Simplifies circuit design\n• Reduces component count\n• Reduces pick and place costs\n• AEC-Q101 qualified;

Nexperia

安世

50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ

NPN/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.\n NPN/NPN complement: PUMH9-Q\n PNP/PNP complement: PUMB9-Q • 100 mA output current capability\n• Built-in bias resistors\n• Simplifies circuit design\n• Reduces component count\n• Reduces pick and place costs\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世