PUMD6H-Q中文资料安世数据手册PDF规格书

厂商型号	PUMD6H-Q
功能描述	50 V, 100 mA NPN/PNP Resistor-Equipped double Transistor; R1 = 4.7 kΩ, R2 = open
丝印标识	7G
封装外壳	TSSOP6
文件大小	264.54 Kbytes
页面数量	14 页
生产厂商	Nexperia B.V. All rights reserved
企业简称	NEXPERIA【安世】
中文名称	安世半导体(中国)有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-5 17:33:00
人工找货	PUMD6H-Q价格和库存，欢迎联系客服免费人工找货

1. General description

NPN/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363 (TSSOP6) Surface-

Mounted Device (SMD) plastic package.

NPN/NPN complement: PUMH7H-Q

PNP/PNP complement: PUMB3H-Q

2. Features and benefits

• 100 mA output current capability

• Built-in resistors

• Simplifies circuit design

• Reduces component count

• Reduces pick and place costs

• High-temperature applications up to 175 °C

• Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

• Digital applications

• Cost saving alternative for BC847 / BC857 series in digital applications

• Controlling IC inputs

• Switching loads