丝印：7G；Package：TSSOP6；50 V, 100 mA NPN/PNP Resistor-Equipped double Transistor; R1 = 4.7 kΩ, R2 = open

1. General description NPN/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363 (TSSOP6) Surface- Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH7H-Q PNP/PNP complement: PUMB3H-Q 2. Features and benefits • 100 mA output current capability • Built-in resistor

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50 V, 100 mA NPN/PNP Resistor-Equipped double Transistor; R1 = 4.7 kΩ, R2 = open

NPN/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363 (TSSOP6) Surface-Mounted Device (SMD) plastic package.\n NPN/NPN complement: PUMH7H-Q\n PNP/PNP complement: PUMB3H-Q • 100 mA output current capability\n• Built-in resistors\n• Simplifies circuit design\n• Reduces component count\n• Reduces pick and place costs\n• High-temperature applications up to 175 °C\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

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NXP
SOT-363

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