丝印：D2；Package：TSSOP6；50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 22 kΩ, R2 = 22 kΩ

1. General description NPN/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363 (SC-88) Surface- Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH1-Q PNP/PNP complement: PUMB1 2. Features and benefits • 100 mA output current capability • Built-in bias resistor

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安世安世半导体(中国)有限公司

NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

文件：1.12964 Mbytes 页数：19 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：T6*；Package：SOT363；NPN/PNP resistor-equipped transistors;

文件：178.52 Kbytes 页数：11 Pages

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安世安世半导体(中国)有限公司

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

NPN/PNP resistor-equipped transistors; R1=22kΩ, R2=22kΩ

NPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. • 100 mA output current capability\n• Built-in bias resistors\n• Simplifies circuit design\n• Reduces component count\n• Reduces pick and place costs\n• AEC-Q101 qualified;

Nexperia

安世

50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 22 kΩ, R2 = 22 kΩ

NPN/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.\n NPN/NPN complement: PUMH1-Q\n PNP/PNP complement: PUMB1 • 100 mA output current capability\n• Built-in bias resistors\n• Simplifies circuit design\n• Reduces component count\n• Reduces pick and place costs\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世