PUMD13

NPN/PNP resistor-equipped transistors; R1 = 4.7 kOHM, R2 = 47 kOHM

Developedespeciallyfortheautomotivesector,500mARETscombineatransistorwithtworesistorstoprovideanoptimalintegratedsolutionfordigitalapplicationsinautomotivesystems,forexamplecontrolunits.Alsoanextensiveportfoliowithsingleanddouble100mARETsisavailablefors

PUMD13

NPN/PNP resistor-equipped transistors; R1 = 4.7 k廓, R2 = 47 k廓

DESCRIPTION NPN/PNPresistor-equippedtransistors(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Lowcurrent

PUMD13

Marking：31；Package：SC-88；NPN/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k

Featuresandbenefits 100mAoutputcurrentcapability Built-inbiasresistors Simplifiescircuitdesign Reducescomponentcount Reducespickandplacecosts AEC-Q101qualified

PUMD13

Low VCEsat (BISS) transistors

PUMD13-Q

Marking：31；Package：TSSOP6；NPN/PNP resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 47 kΩ

1.Generaldescription NPN/PNPdoubleResistor-EquippedTransistor(RET)inaverysmallSOT363(SC-88)Surface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •100mAoutputcurrentcapability •Built-inbiasresistors •Simplifiescircuitdesign •Reducescomponentcoun