PNP/PNP resistor-equipped transistors; R1 = 10 kW, R2 = 47 kW

DESCRIPTION PNP/PNP resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current

文件：54.12 Kbytes 页数：8 Pages

PHI

飞利浦

PNP/PNP resistor-equipped transistors; R1 = 10 k廓, R2 = 47 k廓

DESCRIPTION PNP/PNP resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current

文件：143.99 Kbytes 页数：8 Pages

恩XP

丝印：B9；Package：TSSOP6；50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ

1. General description PNP/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface- Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD9 NPN/NPN complement: PUMH9 2. Features and benefits • 100 mA output current capability • Built-in bias resistors

文件：237.02 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：B9；Package：SC-88；PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

文件：920.08 Kbytes 页数：15 Pages

NEXPERIA

安世

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦