PNP/PNP resistor-equipped transistors; R1 = 4.7 kW, R2 = 4.7 kW

General description PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■ Reduces pick and place costs ■ Simplifies circuit design ■

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恩XP

丝印：B6；Package：SC-88；PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

文件：916.89 Kbytes 页数：15 Pages

NEXPERIA

安世

NPN/PNP resistor-equipped transistors : R1 = 4.7 k-ohm, R2 = 4.7 k-ohm

Developed especially for the automotive sector, 500 mA RETs combine a transistor with two resistors to provide an optimal integrated solution for digital applications in automotive systems, for example control units. Also an extensive portfolio with single and double 100 mA RETs is available for s

文件：61.59 Kbytes 页数：10 Pages

PHI

PHI

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

PHI

PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ

General description\nPNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.Features and benefits\n■ 100 mA output current capability\n■ Reduces component count\n■ Built-in bias resistors\n■ Reduces pick and place costs\n■ Simplifies circuit design\n■ AEC

恩XP

PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ

PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. • 100 mA output current capability\n• Built-in bias resistors\n• Simplifies circuit design\n• Reduces component count\n• Reduces pick and place costs\n• AEC-Q101 qualified;

Nexperia

安世