Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 500 ??1400 MHz

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INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 500 ??1400 MHz

文件：530.04 Kbytes 页数：8 Pages

CREE

科锐

Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 500 – 1400 MHz

Infineon

英飞凌

High Power RF LDMOS FET 12 W, 50 V, 500 – 1400 MHz

UnmatchedTarget pulsed CW performance at 821 MHz; 48 V: Ouput power = 12 W P1dB; Efficiency = 62%; Gain = 22 dBCapable of withstanding a 10:1 load mismatch at 50 V; 12 W (CW) output powerIntegrated ESD protectionHuman Body Model class 1B (per ANSI/ESDA/JEDEC JS-001)Excellent thermal stabilityPb- • Unmatched\n• Target pulsed CW performance at 821 MHz; 48 V: Ouput power = 12 W P1dB; Efficiency = 62%; Gain = 22 dB\n• Capable of withstanding a 10:1 load mismatch at 50 V; 12 W (CW) output power\n• Integrated ESD protection\n• Human Body Model class 1B (per ANSI/ESDA/JEDEC JS-001)\n• Excellen;

MACOM

Package：10-LDFN 裸露焊盘；包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF MOSFET LDMOS 48V PG-SON-10

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