PTVA101K02EV-V1-R0分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

PTVA101K02EV-V1-R0属于分立半导体产品的晶体管-FETMOSFET-射频。由WOLFSPEED, INC.制造生产的PTVA101K02EV-V1-R0晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。

描述 Description

The PTVA101K02EV LDMOS FET is designed for use in power amplifier

applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange.

Manufactured with Wolfspeed's advanced LDMOS process, this device

provides excellent thermal performance and superior reliability.

特性 Features

• Broadband input matching

• High gain and efficiency

• Integrated ESD protection

• Human Body Model Class 2 (per ANSI/ESDA/JEDEC

JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant

• Capable of withstanding a 10:1 load mismatch

(all phase angles) at 1000 W under MODE–S

pulse condition, (32µS ON / 18µS OFF) X 80,

LTDF = 6.4.