Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 470 – 806 MHz

Description The PTVA047002EV LDMOS FET is designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides exce

文件：423.05 Kbytes 页数：8 Pages

WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET

文件：1.02288 Mbytes 页数：8 Pages

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 470 ??806 MHz

文件：449.04 Kbytes 页数：8 Pages

Cree

科锐

Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 470 – 806 MHz

Description The PTVA047002EV LDMOS FET is designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides exce

文件：423.05 Kbytes 页数：8 Pages

WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 470 – 806 MHz

Description The PTVA047002EV LDMOS FET is designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides exce

文件：423.05 Kbytes 页数：8 Pages

WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET

文件：1.02288 Mbytes 页数：8 Pages

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FET

Infineon

英飞凌

High Power RF LDMOS FET 700 W; 50 V; 470 - 806 MHz

The PTVA047002EV LDMOS FET is designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance an ·Input matched\n·Integrated ESD protection\n·Low thermal resistance\n·High gain\n·Thermally enhanced package\n·RoHS compliant\n·Capable of withstanding a 10:1 VSWR at 130 W average power under DVB-T signal condition\n·Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001);

MACOM

UHF Broadcast (470 MHz to 806 MHz)

High Power RF LDMOS FET, 700W, 50V, 470 - 806 MHz ·Integrated ESD protection\n ·Low thermal resistance\n ·High gain\n ·Thermally enhanced package\n ·RoHS compliant;

Infineon

英飞凌

包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC AMP RF LDMOS

WOLFSPEED