UHF & L Band (400 MHz to 1400 MHz)

High Power RF LDMOS FET, 500 W, 50 V, 390 – 450 MHz ·Unmatched input and output\n ·High gain and effi ciency\n ·Integrated ESD protection\n ·Low thermal resistance\n ·Pb-free and RoHS-compliant\n ·Capable of withstanding a 13:1 load mismatch at 57 dBm under pulsed conditions: 12 μsec pulse width, 10% duty cycle\n ·Package: H-36275-4, bolt-d;

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 ??450 MHz

文件：1.0249 Mbytes 页数：8 Pages

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 ??450 MHz

文件：1.0249 Mbytes 页数：8 Pages

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 ??450 MHz

文件：1.0249 Mbytes 页数：8 Pages

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 ??450 MHz

文件：1.0249 Mbytes 页数：8 Pages

Infineon

英飞凌

Package：H-36275-4；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC AMP RF LDMOS

Infineon

英飞凌