High Power RF LDMOS FET 500 W; 50 V; 390 - 450 MHz

The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance an ·Unmatched input and output\n·High gain and efficiency\n·Integrated ESD protection\n·Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)\n·Low thermal resistance\n·Pb-free and RoHS-compliant\n·Capable of withstanding a 13:1 load mismatch at 57 dBm under pulsed conditions: 12 ?sec pulse width; 10&#;

MACOM

Package：H-36275-4；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC AMP RF LDMOS H-36275-4

WOLFSPEED

Package：H-36275-4；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF LDMOS FET 500W, 390 - 450MHZ

WOLFSPEED

原厂

NEXPERIA

安世

上传：深圳市世正电子有限公司

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NEXPERIA

安世

上传：北京天阳诚业科贸有限公司