Microminiature SMT Side Actuated

Features/Benefits • 3.5 x 3.55 mm footprint • Front PIP leads option for strong shear resistance • ESD pin option • Reduced footprint

文件：230.39 Kbytes 页数：3 Pages

CK-COMPONENTS

力特

微型 SMT 侧面操作

C&K

高铭

D2PAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 8.0 Amperes)

VOLTAGE 20 to 150 Volts CURRENT 8 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high

文件：56.06 Kbytes 页数：2 Pages

PANJIT

強茂

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION The µPA840TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q

文件：79.35 Kbytes 页数：16 Pages

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION The µPA840TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q

文件：79.35 Kbytes 页数：16 Pages

NEC

瑞萨