混合型P+N沟道增强型场效应管

\n 封装形式：SOP8类型：N+PESD Diode：否/否VDS (V)：40/-40VGS (V)：±20/±20VTH (V)Typ：1.6/-1.6ID* (A) 25°C：7/-6PD* (W) 25°C：2月2日RDS(ON) (mΩ max) at VGS= 10V：-RDS(ON) (mΩ max) at VGS= 4.5V：20/35RDS(ON) (mΩ max) at VGS= 2.5V：30/45RDS(ON) (mΩ max) at VGS= 1.8V：-典型应用：风扇

Puolop

迪浦

沟槽型功率场效应管

HTSEMI

金誉半导体

沟槽型功率场效应管

HTSEMI

金誉半导体

75Ω 5 −2000MHz Digital Step Attenuator

Key Features  6-Bit, 31.5dB Range, 0.5dB Step  Patented Circuit Architecture  Frequency Range 5MHz to 2000MHz  High Linearity, IIP3 69dBm Typical at 850MHz  Serial and Parallel Control Interface  RF Pads Have No DC Voltage; Can be DC Grounded Externally  Option to Turn Off Negative

文件：2.60914 Mbytes 页数：21 Pages

QORVO

威讯联合

75Ω 5 −2000MHz Digital Step Attenuator

Key Features  6-Bit, 31.5dB Range, 0.5dB Step  Patented Circuit Architecture  Frequency Range 5MHz to 2000MHz  High Linearity, IIP3 69dBm Typical at 850MHz  Serial and Parallel Control Interface  RF Pads Have No DC Voltage; Can be DC Grounded Externally  Option to Turn Off Negative

文件：2.60914 Mbytes 页数：21 Pages

QORVO

威讯联合

75Ω 5 −2000MHz Digital Step Attenuator

Key Features  6-Bit, 31.5dB Range, 0.5dB Step  Patented Circuit Architecture  Frequency Range 5MHz to 2000MHz  High Linearity, IIP3 69dBm Typical at 850MHz  Serial and Parallel Control Interface  RF Pads Have No DC Voltage; Can be DC Grounded Externally  Option to Turn Off Negative

文件：2.60914 Mbytes 页数：21 Pages

QORVO

威讯联合