High Power RF LDMOS FET 208 W, 48 V, 746 – 960 MHz

Broadband internal input matchingAsymmetrical Doherty design: Main P1dB = 190 W Typ; Peak P1dB = 250 W TypTypical Pulsed CW performance; 875 MHz; 48 V; combined outputs: Output power at P1dB = 208 W; Efficiency = 56%; Gain = 18.7 dBCapable of handling 10:1 VSWR @48 V; 208 W (CW) output powerInte • Broadband internal input matching\n• Asymmetrical Doherty design: Main P1dB = 190 W Typ; Peak P1dB = 250 W Typ\n• Typical Pulsed CW performance; 875 MHz; 48 V; combined outputs: Output power at P1dB = 208 W; Efficiency = 56%; Gain = 18.7 dB\n• Capable of handling 10:1 VSWR @48 V; 208 W (CW) ou;

MACOM

Package：H-37248-4；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF MOSFET LDMOS DUAL H-37248-4

WOLFSPEED

Package：H-37248-4；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF MOSFET LDMOS DUAL H-37248-4

WOLFSPEED

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NEXPERIA

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NEXPERIA

安世

上传：北京天阳诚业科贸有限公司