CEB30P03

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-30A,RDS(ON)=32mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=50mW@VGS=-4.5V. Leadfreeproductisacquired.

CEP30P03

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-30A,RDS(ON)=32mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=50mW@VGS=-4.5V. Leadfreeproductisacquired.

CEP30P03

P-ChannelEnhancementModeFieldEffectTransistor

EMB30P03A

P?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS‐30V RDSON(MAX.)30mΩ ID‐22A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EMB30P03VAT

P?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS‐30V RDSON(MAX.)30mΩ ID‐8A Pb‐FreeLeadPlating&HalogenFree

HM30P03Q

-30VDS竊뤒?0VGS竊?30A(ID)P-ChannelEnhancementModeMOSFET

KI30P03DFN

P-ChannelMOSFET

SF30P03C

GlassPassivatedSuperFastRecoveryRectifier

UF30P03

GlassPassivatedUltraFastRecoveryRectifier

UF30P03C

GlassPassivatedUltraFastRecoveryRectifier

UT30P03

P-CHANNELENHANCEMENTMODE