Wideband RF LDMOS Integrated Power Amplifier 30 W, 700 ??1000 MHz

文件：204.7 Kbytes 页数：11 Pages

INFINEON

英飞凌

Wideband RF LDMOS Integrated Power Amplifier 30 W, 700 – 1000 MHz

Infineon

英飞凌

RF Power Amplifier ICs

Wideband RF LDMOS Integrated Power Amplifier, 30 W, 28 V, 700 – 1000 MHz ·Designed for wide RF modulation bandwidths, and low memory effects\n ·On-chip matching, integrated input DC block, 50-ohm input and ~ 8-ohm output\n ·Typical GSM/EDGE performance, 940 MHz, 28 V - Output power = 15 W Avg  - Linear gain = 31 dB - Power added efficiency = 36% - EVM at 15 W = 1;

Infineon

英飞凌

Package：20-SOIC（0.433"，11.00mm 宽）裸露焊盘；包装：散装 类别：RF/IF，射频/中频和 RFID 射频放大器 描述：IC AMP GSM 700MHZ-1GHZ DSO20-63

INFINEON

英飞凌