THermlly- Enganced High Power RF LDMOS FET 200W, 28V, 2620 - 2690 MHz

文件：473.08 Kbytes 页数：10 Pages

INFINEON

英飞凌

Cellular (2300 MHz to 2700 MHz)

Thermally-Enhanced High Power RF LDMOS FET, 200 W, 28 V, 2620 – 2690 MHz Designed for Doherty, optimized for peak side ·Broadband internal matching\n ·Wide video bandwidth\n ·Typical single-carrier WCDMA performance, 2690 MHz, 28 V, 10 dB PAR @ 0.01% CCDR  - 50 W output power at P1dB  - 29% efficiency  - 19.5 dB gain  - –31.5 dBc ACPR at 2690 MHz\n ·Capable of handling 10:1 VSWR @ 28 V, 180 W (CW) out;

Infineon

英飞凌

包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC AMP RF LDMOS

WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 ??2690 MHz

文件：1.09525 Mbytes 页数：10 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 ??2690 MHz

文件：616.28 Kbytes 页数：10 Pages

CREE

科锐