Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ??2170 MHz

文件：830.94 Kbytes 页数：14 Pages

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Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ??2170 MHz

文件：830.94 Kbytes 页数：14 Pages

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110-2170 MHz

文件：978.81 Kbytes 页数：14 Pages

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ??2170 MHz

文件：830.94 Kbytes 页数：14 Pages

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ??2170 MHz

文件：830.94 Kbytes 页数：14 Pages

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ??2170 MHz

文件：830.94 Kbytes 页数：14 Pages

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ??2170 MHz

文件：830.94 Kbytes 页数：14 Pages

Infineon

英飞凌

Cellular (2000 MHz to 2200 MHz)

High Power RF LDMOS FET, 240 W, 2110 – 2170 MHz ·Broadband internal input and output matching\n ·Enhanced for use in DPD error correction systems\n ·Wide video bandwidth\n ·Typical single-carrier WCDMA performance at 2170 MHz, 30 V, IDQ = 1.85 A, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 7.5 dB @ 0.01% CCDF - Average output power = ;

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz

Infineon

英飞凌

IC AMP RF LDMOS

Wolfspeed(CREE)