Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 ??2170 MHz

文件：477.68 Kbytes 页数：14 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs

文件：819.39 Kbytes 页数：14 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs

文件：819.39 Kbytes 页数：14 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs

文件：819.39 Kbytes 页数：14 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs

文件：819.39 Kbytes 页数：14 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs

文件：819.39 Kbytes 页数：14 Pages

INFINEON

英飞凌

Cellular (2000 MHz to 2200 MHz)

High Power RF LDMOS FET, 180 W, 30 V, 2110 – 2170 MHz ·Broadband internal matching\n ·Typical two-carrier WCDMA performance at 2170 MHz, 30 V - Average output power = 40 W - Linear Gain = 17.5 dB - Efficiency = 29.7% - Intermodulation distortion = –34 dBc - Adjacent channel power = –37 dBc\n ·Typical CW performance, 2170 MHz, 30 V - Output power ;

Infineon

英飞凌

IC AMP RF LDMOS H-34288-4

Infineon

英飞凌

IC AMP RF LDMOS

Infineon

英飞凌

Package：2-扁平封装，叶片引线，带法兰；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC AMP RF LDMOS H-34288-4

INFINEON

英飞凌