Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920-960 MHz

文件：1.78781 Mbytes 页数：13 Pages

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Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 ??960 MHz

文件：1.01581 Mbytes 页数：13 Pages

INFINEON

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Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 ??960 MHz

文件：618.19 Kbytes 页数：13 Pages

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Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 ??960 MHz

文件：1.01581 Mbytes 页数：13 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 ??960 MHz

文件：1.01581 Mbytes 页数：13 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 ??960 MHz

文件：1.01581 Mbytes 页数：13 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 ??960 MHz

文件：1.01581 Mbytes 页数：13 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 ??960 MHz

文件：1.01581 Mbytes 页数：13 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920-960 MHz

Infineon

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Cellular (700 MHz to 1000 MHz)

High Power RF LDMOS FET, 160 W, 28 V, 920 – 960 MHz ·Broadband internal matching\n ·Wide video bandwidth\n ·Typical CW performance, 960 MHz, 28 V - Average output power = 160 W - Gain = 19.5 dB - Efficiency = 60%\n ·Integrated ESD protection\n ·Low thermal resistance\n ·Capable of handling 10:1 VSWR @ 28 V, 160 W (CW) output power\n ·;

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