Thermally-Enhanced High Power RF LDMOS FETs

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Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 . 960 MHz

文件：226.78 Kbytes 页数：14 Pages

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 ??960 MHz

文件：710.22 Kbytes 页数：14 Pages

Cree

科锐

Thermally-Enhanced High Power RF LDMOS FETs

文件：1.20768 Mbytes 页数：14 Pages

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs

文件：1.20768 Mbytes 页数：14 Pages

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs

文件：1.20768 Mbytes 页数：14 Pages

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs

文件：1.20768 Mbytes 页数：14 Pages

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs

文件：1.20768 Mbytes 页数：14 Pages

Infineon

英飞凌

Cellular (700 MHz to 1000 MHz)

High Power RF LDMOS FET 90 W, 28 V, 920 – 960 MHz ·Input and output internal matching\n Typical CW performance, 960 MHz, 28 V, 90 W output power at P1dB, 65% efficiency\n Typical two-carrier WCDMA performance, 960 MHz, 28 V - 20 W average output power - 20.8 dB gain - 35% Efficiency - –35 dBc intermodulation distortion\n ·Integrated ;

Infineon

英飞凌

High Power RF LDMOS FET 90 W, 28 V, 920 – 960 MHz

The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced packages. Manufactured with Wolfspeed's advanced LDMOS • Input and output internal matching\n• Typical CW performance, 960 MHz, 28 V\n• Output power at P1dB = 90 W\n• Efficiency = 65%\n• Typical two-carrier WCDMA performance, 960 MHz, 28 V\n• Average output power = 20 W\n• Linear Gain = 20.8 dB\n• Efficiency = 35%\n• Intermodulation distortion =;

MACOM