Cellular (700 MHz to 1000 MHz)

High Power RF LDMOS FET, 270 W, 28 V, 728 – 768 MHz ·Broadband internal matching\n ·Wide video bandwidth\n ·Typical pulsed performance, 768 MHz, 28 V (10 μs pulse width,10% duty cycle, class AB) - Output power at P1dB = 320 W - Gain = 17.5 dB - Efficiency = 60%\n ·Integrated ESD protection: Human Body Model (HBM) Class 2 minimum (per JESD2;

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英飞凌

Thermally-Enhanced High Power RF LDMOS FET

文件：917.07 Kbytes 页数：10 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET

文件：917.07 Kbytes 页数：10 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET

文件：917.07 Kbytes 页数：10 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET

文件：917.07 Kbytes 页数：10 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET

Infineon

英飞凌